?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH40N60UF rev. c1 FGH40N60UF ? 600 v, 40 a field stop igbt november 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c80 a collector current @ t c = 100 o c40 a i cm (1) pulsed collector current @ t c = 25 o c 120 a p d maximum power dissipation @ t c = 25 o c290 w maximum power dissipation @ t c = 100 o c116 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.43 o c / w r ? ja thermal resistance, junction to ambient - 40 o c / w e c g collector (flange) FGH40N60UF 600 v, 40 a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) = 1.8 v @ i c = 40 a ? high input impedance ? fast switching ?rohs compliant applications ? solar inverter, ups, welder, pfc general description using novel field stop igbt tec hnology, fairchild?s field stop igbts offer the optimum performance for solar inverter, ups, welder and pfc applications where low conduction and switch- ing losses are essential.
FGH40N60UF ? 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH40N60UF rev. c1 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted part number top mark package packing method reel size tape width quantity FGH40N60UFtu FGH40N60UF to-247 tube n/a n/a 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 250 ? a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0 v, i c = 250 ? a -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 ? a i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 4.0 5.0 6.5 v v ce(sat) collector to emitter saturation voltage i c = 40 a , v ge = 15 v -1.82.4v i c = 40 a , v ge = 15 v, t c = 125 o c -2.0- v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz -2110- pf c oes output capacitance - 200 - pf c res reverse transfer capacitance - 60 - pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 25 o c -24- ns t r rise time - 44 - ns t d(off) turn-off delay time - 112 - ns t f fall time - 30 60 ns e on turn-on switching loss - 1.19 - mj e off turn-off switching loss - 0.46 - mj e ts total switching loss - 1.65 - mj t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 125 o c -24- ns t r rise time - 45 - ns t d(off) turn-off delay time - 120 - ns t f fall time - 40 - ns e on turn-on switching loss - 1.2 - mj e off turn-off switching loss - 0.69 - mj e ts total switching loss - 1.89 - mj q g total gate charge v ce = 400 v, i c = 40 a, v ge = 15 v - 120 - nc q ge gate to emitter charge - 14 - nc q gc gate to collector charge - 58 - nc
FGH40N60UF ? 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH40N60UF rev. c1 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0.0 1.5 3.0 4.5 6.0 0 20 40 60 80 100 120 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.01.53.04.56.0 0 20 40 60 80 100 120 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 56789101112 0 20 40 60 80 100 120 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3. 5 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = - 40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGH40N60UF ? 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH40N60UF rev. c1 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figur e 12. turn-on characteristics vs. gate resistan ce 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 5000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c rss c oss c iss capacitance [pf] collector-emitter voltage, v ce [v] 30 0 50 100 150 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 1ms 10 ms dc single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 400 0 1020304050 10 100 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 200
FGH40N60UF ? 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH40N60UF rev. c1 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. gate resistance collector current figure 17. switching loss vs. collector current figure 18. turn off switching soa characteristics 0 1020304050 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 5500 20 40 60 80 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 500 20 40 60 80 10 100 600 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 1 10 0.3 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 200 20 40 60 80 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a]
FGH40N60UF ? 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH40N60UF rev. c1 typical performance characterist ics figure 19.transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 0.2 0.5 0.1 0.05 0.01 0.02 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c t 1 p dm t 2
FGH40N60UF ? 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH40N60UF rev. c1 mechanical dimensions figure 20. to-247 3l - to-247,molded,3 lead,jedec variation ab package drawings are provided as a service to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/pa ckagedetails.html?id=pn_to247-003
FGH40N60UF ? 600 v, 40 a field stop igbt ?2008 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH40N60UF rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes withou t further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * ? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i66 ?
|
